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| 30 -10V 25 -4V 20 -5V 30 Vds=-5V 25 20 -Id (A) -Id (A) -3.5V Vgs=-3V 15 10 5 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 15 10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -Vgs (Volts) Figure 2: Transfer Characteristics 1.60 125C 25C 40 Normalized On-Resistance 35 Vgs=-4.5V Id=-7.1A 1.40 Vgs=-10V Rds(on) (m:) 30 25 Vgs=-10V 20 15 10 0 5 10 15 20 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 Id=-7.1A 50 1.20 Vgs=-4.5V Id=-5.6A 1.00 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 Rds(on) (m:) 125C -Is (A) 40 125C 30 1.0E-02 1.0E-03 1.0E-04 20 25C 1.0E-05 1.0E-06 25C 10 3 4 5 6 7 8 9 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics 10 Vds=-15V Id=-7.1A 8 2250 2000 1750 Ciss Capacitance (pF) -Vgs (Volts) 1500 1250 1000 750 500 250 Coss Crss 6 4 2 0 0 4 8 12 16 20 24 28 32 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150C, Ta=25C Rds(on) limited 0.1s 1.0 10Ps 100Ps 1ms 10ms 1s 10s 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 40 Tj(max)=150C Ta=25C 30 -Id (Amps) Power (W) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Pd 0.1 Ton Single Pulse 0.01 0.00001 T 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 |
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